Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects

Grier, A, Valavanis, A, Edmunds, C et al. (8 more authors) (2016) Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects. In: 2016 IEEE Photonics Society Summer Topical Meeting Series. 2016 IEEE Photonics Society Summer Topical Meeting (SUM 2016), 11-13 Jul 2016, Newport Beach, CA, USA. IEEE , pp. 90-91. ISBN 9781509019007

Abstract

Metadata

Authors/Creators:
  • Grier, A
  • Valavanis, A
  • Edmunds, C
  • Shao, J
  • Cooper, JD
  • Gardner, G
  • Mantra, MJ
  • Malis, O
  • Indjin, D
  • Ikonic, Z
  • Harrison, P
Copyright, Publisher and Additional Information: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: Quantum cascade lasers; Optoelectronic devices; Aluminum gallium nitride; Wide band gap semiconductors; Resonant tunneling devices; Performance evaluation
Dates:
  • Published: 25 August 2016
  • Accepted: 29 April 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 26 Oct 2016 09:59
Last Modified: 15 Jan 2018 17:39
Published Version: https://doi.org/10.1109/PHOSST.2016.7548743
Status: Published
Publisher: IEEE
Identification Number: https://doi.org/10.1109/PHOSST.2016.7548743

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