Growth and characterisation of InAsP/AlGaInP QD laser structures

Krysa, A. orcid.org/0000-0001-8320-7354, Roberts, J.S., Devenson, J. et al. (4 more authors) (2016) Growth and characterisation of InAsP/AlGaInP QD laser structures. In: Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016. Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, 26-30 Jun 2016, Toyama, Japan. IEEE . ISBN 978-1-5090-1964-9

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Copyright, Publisher and Additional Information: © 2016 IEEE. This is an author produced version of a paper subsequently published in Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 4 August 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 15 Sep 2016 12:45
Last Modified: 24 Oct 2016 19:29
Published Version: http://dx.doi.org/10.1109/ICIPRM.2016.7528566
Status: Published
Publisher: IEEE
Refereed: Yes
Identification Number: https://doi.org/10.1109/ICIPRM.2016.7528566

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