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Damping of exciton rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots

Ramsay, A.J., Gopal, A., Gauger, E.M., Nazir, A., Lovett, B.W., Fox, A.M. and Skolnick, M.S. (2010) Damping of exciton rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots. Physical Review Letters , 104 (1). Art no.017402. ISSN 0031-9007

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Abstract

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

Item Type: Article
Copyright, Publisher and Additional Information: © 2010 American Physical Society. This is an author produced version of a paper subsequently published in Physical Review Letter. Uploaded in accordance with the publisher's self-archiving policy.
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 23 Feb 2010 11:07
Last Modified: 08 Feb 2013 16:59
Published Version: http://dx.doi.org/10.1103/PhysRevLett.104.017402
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: 10.1103/PhysRevLett.104.017402
URI: http://eprints.whiterose.ac.uk/id/eprint/10431

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