A new precursor route to semiconducting Zinc Oxide

Grell, M., Althagafi, T.M. and Al Baroot, A.F. (2016) A new precursor route to semiconducting Zinc Oxide. IEEE Electron Device Letters. ISSN 0741-3106



  • Grell, M.
  • Althagafi, T.M.
  • Al Baroot, A.F.
Copyright, Publisher and Additional Information: © 2016 Institute of Electrical and Electronics Engineers. This is an author produced version of a paper subsequently published in IEEE Electron Device Letters. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: II-VI semiconductor; precursor; thin film transistor; Zinc chloride; Zinc oxide
  • Accepted: 24 August 2016
  • Published: 26 August 2016
  • Published (online): 26 August 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Funding Information:
FunderGrant number
Royal Embassy of Saudi Arabia, Cultural Bureau, LondonTU068 (Talal Althagafi)
Cultural Bureau of Saudi Arabia to the UK & IrelandAbbad Al Baroot
Depositing User: Symplectic Sheffield
Date Deposited: 25 Aug 2016 10:59
Last Modified: 24 Oct 2016 17:28
Published Version: http://dx.doi.org/10.1109/LED.2016.2603520
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/LED.2016.2603520

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