Valence band offsets of Sc<inf>x</inf>Ga<inf>1-x</inf>N/AlN and Sc<inf>x</inf>Ga<inf>1-x</inf>N/GaN heterojunctions

Tsui, H.C.L., Goff, L.E., Palgrave, R.G. et al. (4 more authors) (2016) Valence band offsets of Sc<inf>x</inf>Ga<inf>1-x</inf>N/AlN and Sc<inf>x</inf>Ga<inf>1-x</inf>N/GaN heterojunctions. Journal of Physics D: Applied Physics, 49 (26). ISSN 0022-3727

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2016 IOP Publishing
Keywords: ScGaN; heterojunction; molecular beam epitaxy; X-ray photoelectron spectroscopy; valence band offset
Dates:
  • Published: 26 May 2016
  • Published (online): 26 May 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 08 Aug 2016 11:23
Last Modified: 02 Jul 2017 01:35
Published Version: http://dx.doi.org/10.1088/0022-3727/49/26/265110
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/0022-3727/49/26/265110

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