GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation

Chaqmaqchee, F.A.I., Mazzucato, S., Oduncuoglu, M. et al. (5 more authors) (2011) GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation. NANOSCALE RES LETT, 6. 104. ISSN 1931-7573

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Copyright, Publisher and Additional Information: © Chaqmaqchee et al; licensee Springer. 2011 This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Keywords: ELECTRON LIGHT EMITTER; VCSEL; FIELD; EMISSION
Dates:
  • Published: 27 January 2011
  • Accepted: 27 January 2011
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 04 Aug 2016 10:23
Last Modified: 04 Aug 2016 10:23
Published Version: http://dx.doi.org/10.1186/1556-276X-6-104
Status: Published
Publisher: SpringerOpen
Refereed: Yes
Identification Number: https://doi.org/10.1186/1556-276X-6-104

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