N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: Application to ambipolar FETs

Taneja, D., Sfigakis, F., Croxall, A.F. et al. (5 more authors) (2016) N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: Application to ambipolar FETs. Semiconductor Science and Technology, 31 (6). ISSN 0268-1242

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2016 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (https://creativecommons.org/licenses/by/3.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: undoped; GaAs/AlGaAs; quantum wells; ohmic contacts; etching; etch profiles
Dates:
  • Published (online): 28 April 2016
  • Accepted: 29 March 2016
  • Published: 1 June 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 25 Jul 2016 15:21
Last Modified: 25 Jul 2016 15:21
Published Version: http://dx.doi.org/10.1088/0268-1242/31/6/065013
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/0268-1242/31/6/065013

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