Composition measurement of epitaxial Sc<inf>x</inf>Ga<inf>1-x</inf>N films

Tsui, H.C.L., Goff, L.E., Barradas, N.P. et al. (8 more authors) (2016) Composition measurement of epitaxial Sc<inf>x</inf>Ga<inf>1-x</inf>N films. Semiconductor Science and Technology, 31 (6). ISSN 0268-1242

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2016 IOP Publishing. This is an author produced version of a paper subsequently published in Semiconductor Science and Technology. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: ScGaN; Rutherford backscattering; XPS; composition measurement
Dates:
  • Published: 19 May 2016
  • Accepted: 15 April 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 23 Jun 2016 09:05
Last Modified: 01 Jul 2017 20:20
Published Version: https://dx.doi.org/10.1088/0268-1242/31/6/064002
Status: Published
Publisher: IOP Publishing
Identification Number: https://doi.org/10.1088/0268-1242/31/6/064002

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