Tsui, H.C.L., Goff, L.E., Barradas, N.P. et al. (8 more authors) (2016) Composition measurement of epitaxial Sc<inf>x</inf>Ga<inf>1-x</inf>N films. Semiconductor Science and Technology, 31 (6). ISSN 0268-1242
Abstract
Four different methods for measuring the compositions of epitaxial ScxGa1-xN films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial ScxGa1-xN films with 0 ≤ x ≤ 0.26 were measured directly using Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from x-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IOP Publishing. This is an author produced version of a paper subsequently published in Semiconductor Science and Technology. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | ScGaN; Rutherford backscattering; XPS; composition measurement |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 23 Jun 2016 09:05 |
Last Modified: | 01 Jul 2017 20:20 |
Published Version: | https://dx.doi.org/10.1088/0268-1242/31/6/064002 |
Status: | Published |
Publisher: | IOP Publishing |
Identification Number: | 10.1088/0268-1242/31/6/064002 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:101295 |