Chauhan, D, Perera, AGU, Li, LH et al. (2 more authors) (2016) Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector. Applied Physics Letters, 108 (20). 201105. ISSN 0003-6951
Abstract
We report the performance of a 30 period p-GaAs/AlxGa1 − xAs heterojunction photovoltaic infrared detector, with graded barriers, operating in the 2–6 μm wavelength range. Implementation of a current blocking barrier increases the specific detectivity (D*) under dark conditions by two orders of magnitude to ∼1.9 × 1011 Jones at 2.7 μm, at 77 K. Furthermore, at zero bias, the resistance-area product (R 0 A) attains a value of ∼7.2 × 108 Ω cm2, a five orders enhancement due to the current blocking barrier, with the responsivity reduced by only a factor of ∼1.5.
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Copyright, Publisher and Additional Information: | The following article appeared in Applied Physics Letters. 108, 201105 (2016) and may be found at http://dx.doi.org/10.1063/1.4952431. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. Uploaded in accordance with the publisher's self-archiving policy. | ||||
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Institution: | The University of Leeds | ||||
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) | ||||
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Depositing User: | Symplectic Publications | ||||
Date Deposited: | 24 May 2016 11:31 | ||||
Last Modified: | 20 Jul 2017 20:54 | ||||
Published Version: | http://dx.doi.org/10.1063/1.4952431 | ||||
Status: | Published | ||||
Publisher: | American Institute of Physics (AIP) | ||||
Identification Number: | https://doi.org/10.1063/1.4952431 |