Kepaptsoglou, D, Hardcastle, TP, Seabourne, CR et al. (8 more authors) (2015) Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping. ACS Nano, 9 (11). pp. 11398-11407. ISSN 1936-0851
Abstract
A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations is used to describe the electronic structure modifications incurred by free-standing graphene through two types of single-atom doping. The N K and C K electron energy loss transitions show the presence of π* bonding states, which are highly localized around the N dopant. In contrast, the B K transition of a single B dopant atom shows an unusual broad asymmetric peak which is the result of delocalized π* states away from the B dopant. The asymmetry of the B K toward higher energies is attributed to highly localized σ* antibonding states. These experimental observations are then interpreted as direct fingerprints of the expected p- and n-type behavior of graphene doped in this fashion, through careful comparison with density functional theory calculations.
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Copyright, Publisher and Additional Information: | © 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsnano.5b05305. Uploaded in accordance with the publisher's self-archiving policy. | ||||
Keywords: | graphene; doping; electronic structure; STEM; EELS; ab initio calculations; DFT | ||||
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Institution: | The University of Leeds | ||||
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds) > Institute for Materials Research (Leeds) | ||||
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Depositing User: | Symplectic Publications | ||||
Date Deposited: | 03 Nov 2015 14:13 | ||||
Last Modified: | 16 Nov 2016 07:59 | ||||
Published Version: | http://dx.doi.org/10.1021/acsnano.5b05305 | ||||
Status: | Published | ||||
Publisher: | American Chemical Society | ||||
Identification Number: | https://doi.org/10.1021/acsnano.5b05305 |