Avalanche noise characteristics of thin GaAs structures with distributed carrier generation

Li, K.F., Ong, D.S., David, J.P.R. et al. (5 more authors) (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE Transactions on Electron Devices, 47 (5). pp. 910-914. ISSN 0018-9383

Abstract

Metadata

Authors/Creators:
  • Li, K.F.
  • Ong, D.S.
  • David, J.P.R.
  • Tozer, R.C.
  • Rees, G.J.
  • Plimmer, S.A.
  • Chang, K.Y.
  • Roberts, J.S.
Copyright, Publisher and Additional Information: Copyright © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: APD, avalanche multiplication, avalanche noise, GaAs, impact ionization
Dates:
  • Published: 2000
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 14 Jun 2014 09:48
Published Version: http://dx.doi.org/10.1109/16.841220
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1109/16.841220

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