SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

Wirths, S, Buca, D, Tiedemann, AT et al. (9 more authors) (2014) SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications. Thin Solid Films, 557. 183 - 187. ISSN 0040-6090

Abstract

Metadata

Authors/Creators:
  • Wirths, S
  • Buca, D
  • Tiedemann, AT
  • Holländer, B
  • Stoica, T
  • Mussler, G
  • Grützmacher, D
  • Mantl, S
  • Ikonic, Z
  • Harrison, P
  • Breuer, U
  • Hartmann, JM
Copyright, Publisher and Additional Information: (c) 2014, Elsevier. NOTICE: this is the author’s version of a work that was accepted for publication in Thin Solid Films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Thin Solid Films, 557, 2014. http://dx.doi.org/10.1016/j.tsf.2013.10.078
Keywords: Group IV photonics; RP-CVD; Sigesn; Strained Ge
Dates:
  • Published: 2014
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 14 Apr 2014 16:24
Last Modified: 15 Jan 2018 19:37
Published Version: http://dx.doi.org/10.1016/j.tsf.2013.10.078
Status: Published
Publisher: Elsevier
Identification Number: https://doi.org/10.1016/j.tsf.2013.10.078

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