Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region

Cao, Y. orcid.org/0000-0002-6353-7660, Blain, T. orcid.org/0000-0002-7974-7355, Taylor-Mew, J.D. orcid.org/0000-0002-0895-2968 et al. (3 more authors) (2023) Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region. Applied Physics Letters, 122 (5). ISSN 0003-6951

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Dates:
  • Accepted: 11 January 2023
  • Published (online): 31 January 2023
  • Published: 30 January 2023
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/N020715/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/K001469/1
Depositing User: Symplectic Sheffield
Date Deposited: 01 Feb 2023 12:12
Last Modified: 01 Feb 2023 12:12
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1063/5.0139495

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