Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission

A semiconductor laser design for efficient, high power, high brightness red light emission is proposed, using a large optical cavity asymmetric waveguide and a bulk active layer (AL) positioned very close to the p-cladding. The low threshold carrier density associated with the broad AL, as well as the proximity of the AL to the p-cladding, ensure that the electron leakage current, the major detrimental factor in red lasers, stays modest in a broad range of excitation levels. This in turn promises high-power, efficient operation.