Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

In this paper, the turn-on characteristics of the 1.2 kV Trench IGBT (TIGBT) and the 1.2 kV Trench Clustered IGBT (TCIGBT) are investigated through TCAD simulations and experiments. The TCIGBT shows much lower turn-on energy loss (Eon) due to higher current gain than an equivalent TIGBT and the negative gate capacitance effect is effectively suppressed in the TCIGBT by its self-clamping feature and PMOS action. In addition, the impact of 3D scaling rules on the turn-on performance of TIGBT and TCIGBT is analyzed in detail. Simulation results show that scaling rules result in a significant reduction of Eon in both TIGBT and TCIGBT. Furthermore, the experimental results indicate that TCIGBT technology is well suited for high current density operations with low power losses. Compared to the state-of-the-art IGBT technology, an 18% reduction of total power loss can be achieved by the TCIGBT operated at 300 A cm−2 and 175 °C.