Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Zhang, Xiaoqian, Ambhire, Siddhesh C., Lu, Qiangsheng et al. (11 more authors) (2021) Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3. ACS Nano. 15710–15719. ISSN 1936-0851

Abstract

Metadata

Authors/Creators:
  • Zhang, Xiaoqian
  • Ambhire, Siddhesh C.
  • Lu, Qiangsheng
  • Niu, Wei
  • Cook, Jacob
  • Jiang, Jidong Samuel
  • Hong, Deshun
  • Alahmed, Laith
  • He, Liang
  • Zhang, Rong
  • Xu, Yongbing ORCID logo https://orcid.org/0000-0002-7823-0725
  • Zhang, Steven S.L.
  • Li, Peng (pl534@york.ac.uk)
  • Bian, Guang
Copyright, Publisher and Additional Information: Funding Information: This work was supported by the National Key Research and Development Program of China (No. 2016YFA0300803, No. 2017YFA0206304), the National Basic Research Program of China (No. 2014CB921101), the National Natural Science Foundation of China (No. 61427812, 11774160, 11574137, 61474061, 61674079), and Jiangsu Shuangchuang Program, the Natural Science Foundation of Jiangsu Province of China (No. BK20192006, BK20140054). G.B. was supported by the US National Science Foundation (NSF-DMR#1809160). Work by S.C.A. and S.S.-L.Z. was supported by the College of Arts and Sciences, Case Western Reserve University. L.A. acknowledges the NSF under grant No. DMR-2129879335 and Auburn University Research Support Program. P.L. acknowledges the support of Ralph E. Powe Junior Faculty Enhancement Award. W.N. was supported by the Natural Science Foundation of China (Grant No. 11904174), Natural Science Foundation of Jiangsu Province (Grant No. BK20190729), NUPTSF (Grant No. NY219024, NY220203), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJB510047), and High-level Innovation and Entrepreneurship Talents Introduction Program of Jiangsu Province of China. Work at ANL was supported by the U.S. DOE, BES under Contract No. DE-AC02-06CH11357. © 2021 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
Keywords: epitaxial growth, topological Hall effect, topological insulators, two-dimensional ferromagnets, van der Waals materials
Dates:
  • Accepted: 24 August 2021
  • Published (online): 30 August 2021
  • Published: 26 October 2021
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Electronic Engineering (York)
Depositing User: Pure (York)
Date Deposited: 03 Nov 2021 09:20
Last Modified: 31 Jan 2024 01:12
Published Version: https://doi.org/10.1021/acsnano.1c05519
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsnano.1c05519
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