Design optimization of tensile-strained SiGeSn/GeSn quantum wells at room temperature

Chen, Z, Ikonic, Z, Indjin, D orcid.org/0000-0002-9121-9846 et al. (1 more author) (2021) Design optimization of tensile-strained SiGeSn/GeSn quantum wells at room temperature. Journal of Applied Physics, 129 (12). 123102. p. 123102. ISSN 0021-8979

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2021 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chen, Z. et al., 2021. Design optimization of tensile-strained SiGeSn/GeSn quantum wells at room temperature. Journal of Applied Physics, 129(12), p.123102 and may be found at https://aip.scitation.org/doi/10.1063/5.0042482. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 28 March 2021
  • Accepted: 3 March 2021
  • Published (online): 22 March 2021
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 24 Mar 2021 14:27
Last Modified: 24 Mar 2021 14:27
Status: Published
Publisher: American Institute of Physics
Identification Number: https://doi.org/10.1063/5.0042482

Download

Published Version


Embargoed until: 22 March 2022

Filename: 5.0042482.pdf

Request a copy

file not available

Share / Export

Statistics