Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance

Liu, M, Yang, D, Shkurmanov, A et al. (11 more authors) (2021) Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance. ACS Applied Nano Materials, 4 (1). acsanm.0c02368. pp. 94-101. ISSN 2574-0970

Abstract

Metadata

Authors/Creators:
  • Liu, M
  • Yang, D
  • Shkurmanov, A
  • Bae, JH
  • Schlykow, V
  • Hartmann, J-M
  • Ikonic, Z
  • Baerwolf, F
  • Costina, I
  • Mai, A
  • Knoch, J
  • Grützmacher, D
  • Buca, D
  • Zhao, Q-T
Copyright, Publisher and Additional Information: © 2020 American Chemical Society. This is an author produced version of an article published in ACS Applied Nano Material. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: nanowire; gate-all-around; field-effect transistors; GeSn alloys; heterostructure; group IV nanoelectronics
Dates:
  • Published: 22 January 2021
  • Accepted: 11 December 2020
  • Published (online): 21 December 2020
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 05 Jan 2021 11:59
Last Modified: 21 Apr 2021 14:11
Status: Published
Publisher: American Chemical Society (ACS)
Identification Number: https://doi.org/10.1021/acsanm.0c02368

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