Temperature characterisation of spectroscopic InGaP X-ray photodiodes

Butera, S., Lioliou, G., Krysa, A.B. orcid.org/0000-0001-8320-7354 et al. (1 more author) (2018) Temperature characterisation of spectroscopic InGaP X-ray photodiodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 908. pp. 277-284. ISSN 0168-9002

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Copyright, Publisher and Additional Information: © 2018 Elsevier. This is an author produced version of a paper subsequently published in Nuclear Instruments and Methods in Physics Research Section A. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/).
Keywords: InGaP; X-ray spectroscopy; Electron-hole pair creation energy; Semiconductor
Dates:
  • Accepted: 20 August 2018
  • Published (online): 22 August 2018
  • Published: 11 November 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 21 Oct 2020 10:19
Last Modified: 21 Oct 2020 10:31
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.nima.2018.08.064
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