Evaluation of dynamic avalanche performance in 1.2kV MOS-bipolar devices

It is well known that Dynamic Avalanche (DA) phenomenon poses fundamental limits on the power density, turnoff power loss, dV/dt controllability and long-term reliability of MOS-bipolar devices. Therefore, overcoming this phenomenon is essential to improve energy efficiency and ensure their safe operation. In this work, detailed analysis of 1.2 kV MOS-Bipolar devices are undertaken through both calibrated TCAD simulations and experiments to show the fundamental cause of DA and the impact of current density, supply voltage as well as 3D scaling rules on the DA performance. Furthermore, the dynamic avalanche performance of a 1.2 kV NPT Trench Clustered IGBT is evaluated for high current density and low power loss operations. The results indicate that this device configuration is free of DA and can be used for ultra-high current density operation in an energy efficient manner.