Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width

Bai, J., Cai, Y. orcid.org/0000-0002-2004-0881, Feng, P. et al. (4 more authors) (2020) Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width. ACS Nano, 14 (6). pp. 6906-6911. ISSN 1936-0851

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2020 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. (https://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html)
Keywords: μLEDs; selective overgrowth; InGaN/GaN; distributed Bragg reflector; external quantum efficiency; dry-etching
Dates:
  • Accepted: 26 May 2020
  • Published (online): 29 May 2020
  • Published: 23 June 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/M015181/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006361/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 11 Jun 2020 16:19
Last Modified: 16 Nov 2021 13:50
Status: Published
Publisher: American Chemical Society (ACS)
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsnano.0c01180

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