Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation

Luo, P., Ekkanath Madathil, S.N., Nishizawa, S. et al. (1 more author) (2020) Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation. In: Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM). 65th IEEE International Electron Devices Meeting (IEDM), 07-11 Dec 2019, San Francisco, CA, USA. Institute of Electrical and Electronics Engineers (IEEE) , 12.3.1-12.3.4. ISBN 9781728140339

Abstract

Metadata

Authors/Creators:
  • Luo, P.
  • Ekkanath Madathil, S.N.
  • Nishizawa, S.
  • Saito, W.
Copyright, Publisher and Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Dates:
  • Accepted: 10 September 2019
  • Published (online): 13 February 2020
  • Published: 13 February 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research Council (EPSRC)N/A
Depositing User: Symplectic Sheffield
Date Deposited: 20 Nov 2019 09:48
Last Modified: 13 Feb 2021 01:38
Status: Published
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: https://doi.org/10.1109/IEDM19573.2019.8993596
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