Switching Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

This paper presents an experimental study and reports the monitored changes in the switching parameters (quoted in datasheets) of Insulated Gate Bipolar Transistors (IGBTs) when subjected to accelerated ageing through thermo-electrical overstress. The study describes how the accelerated ageing strategy was implemented. Tested IGBTs were characterized before and after accelerated ageing. Details are presented of the IGBT switching parameters characterization setup and the employed Double Pulse technique. Furthermore, the corresponding monitored changes in the turn-off delay time, fall time, energy loss during fall time, turn-off rate of change of collector voltage, turnon delay time, rise time, energy loss during rise time, turn-on rate of change of collector current, reverse recovery time, peak reverse recovery current and energy loss during reverse recovery are presented and discussed.