On the impact of current generation commercial gallium nitride power transistors on power converter loss

Metadata

Authors/Creators:	Petersen, A. Stone, D.A. https://orcid.org/0000-0002-5770-3917 Foster, M.P.
Copyright, Publisher and Additional Information:	© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords:	power convertors; gallium compounds; wide band gap semiconductors; III-V semiconductors; power transistors; switches; current generation commercial power transistors; power converter loss; power switching device loss; multilevel converters; GaN
Dates:	Published (online): 2 November 2017 Published: 26 October 2017
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	11 Jan 2018 14:17
Last Modified:	11 Jan 2018 14:22
Published Version:	https://doi.org/10.1049/el.2017.3183
Status:	Published
Publisher:	Institution of Engineering and Technology
Refereed:	Yes
Identification Number:	https://doi.org/10.1049/el.2017.3183
Related URLs:	Author

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