A snap-back free Shorted Anode Super-Junction TCIGBT

A novel structure called the Shorted-Anod e Super-Junction Trench Clustered IGBT (SA-SJ-TCIGB T) is proposed and demonstrated through numerical simulations in 1.2-k V, Field-Stop technology. This device is based on the Super-Junction Trench Clustered IGBT (SJ-TCIGBT) concept. In the S A-SJ-TCIGBT structure, due to the introduction of a segmented n + -anode, the device can operate in both forward conducting m ode and freewheeling diode mode without any snap-ba ck in the current voltage characteristics. In comparison to t he SJ-TCIGBT structure, the proposed device shows s ignificant improvement in trade-off relationship between forwa rd voltage drop and switch off energy losses. Simu lation results show that 25% decrease in switching energy losses can be achieved. Moreover, the tail current is effective ly reduced without any increase in the overshoot voltage. Detailed two dim ensional modelling of the structure shows that sign ificant amount of excess electrons are extracted through the shorted- anode structure during turn-off process.