Low cost high voltage GaN polarization superjunction field effect transistors

A comprehensive overview of novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and latest results of scaled-up PSJ-FETs from POWDEC KK, have also been discussed. The article also presents hard-switching characteristics of 400V-to-800V boost converter constructed using a PSJ-FET grown on sapphire substrate and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.