Correlation of bandgap reduction with inversion response in (Si)GeSn/high-k/metal stacks.

Schulte-Braucks, C, Narimani, K, Glass, S et al. (7 more authors) (2017) Correlation of bandgap reduction with inversion response in (Si)GeSn/high-k/metal stacks. ACS Applied Materials and Interfaces, 9 (10). pp. 9102-9109. ISSN 1944-8244

Abstract

Metadata

Authors/Creators:
  • Schulte-Braucks, C
  • Narimani, K
  • Glass, S
  • von den Driesch, N
  • Hartmann, JM
  • Ikonic, Z
  • Afanas'ev, VV
  • Zhao, QT
  • Mantl, S
  • Buca, D
Copyright, Publisher and Additional Information: © 2017 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.6b15279. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: defects; direct band gap; generation/recombination; GeSn; high-k/metal gate
Dates:
  • Published: 15 March 2017
  • Accepted: 21 February 2017
  • Published (online): 21 February 2017
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 06 Mar 2017 16:45
Last Modified: 21 Feb 2018 01:38
Published Version: https://doi.org/10.1021/acsami.6b15279
Status: Published
Publisher: American Chemical Society
Identification Number: https://doi.org/10.1021/acsami.6b15279
Related URLs:

Share / Export

Statistics