Items where authors include "Tan, C.H."
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Blain, T. orcid.org/0000-0002-7974-7355, Shulyak, V. orcid.org/0000-0001-5223-0930, Han, I.S. et al. (3 more authors) (2024) Low noise equivalent power InAs avalanche photodiodes for infrared few-photon detection. IEEE Transactions on Electron Devices. ISSN 0018-9383
Taylor-Mew, J. orcid.org/0000-0002-0895-2968, Collins, X. orcid.org/0000-0003-1323-7907, White, B. orcid.org/0000-0001-8785-7151 et al. (2 more authors) (2024) Development of InGaAs/AlGaAsSb Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices. ISSN 0018-9383
Jin, X. orcid.org/0000-0002-7205-3318, Lewis, H.I.J., Yi, X. orcid.org/0000-0003-0177-2398 et al. (6 more authors) (2023) Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode. Optics Express, 31 (20). pp. 33141-33149. ISSN 1094-4087
Hadfield, R.H. orcid.org/0000-0002-8084-4187, Leach, J. orcid.org/0000-0003-3561-4953, Fleming, F. orcid.org/0000-0001-9342-6446 et al. (5 more authors) (2023) Single-photon detection for long-range imaging and sensing. Optica, 10 (9). pp. 1124-1141. ISSN 2334-2536
Gandan, S. orcid.org/0000-0001-6126-0699, Pinel, L.L.G. orcid.org/0000-0001-8603-5631, Morales, J.S.D. orcid.org/0000-0003-0401-324X et al. (3 more authors) (2023) Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44. AIP Advances, 13 (4). 045010. ISSN 2158-3226
Petticrew, J. orcid.org/0000-0003-3424-2457, Ji, Y., Han, I.S. et al. (6 more authors) (2023) Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II superlattice photodiodes. Semiconductor Science and Technology, 38 (2). 025002. ISSN 0268-1242
Cao, Y. orcid.org/0000-0002-6353-7660, Blain, T. orcid.org/0000-0002-7974-7355, Taylor-Mew, J.D. orcid.org/0000-0002-0895-2968 et al. (3 more authors) (2023) Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region. Applied Physics Letters, 122 (5). ISSN 0003-6951
Cao, Y. orcid.org/0000-0002-6353-7660, Osman, T., Clarke, E. orcid.org/0000-0002-8287-0282 et al. (3 more authors) (2022) A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage. Journal of Lightwave Technology, 40 (14). pp. 4709-4713. ISSN 0733-8724
Osman, T., Lim, L.W., Ng, J.S. orcid.org/0000-0002-1064-0410 et al. (1 more author) (2022) Fabrication of infrared linear arrays of InAs planar avalanche photodiodes. Optics Express, 30 (12). p. 21758.
Taylor-Mew, J.D. orcid.org/0000-0002-0895-2968, Petticrew, J.D. orcid.org/0000-0003-3424-2457, Tan, C.H. et al. (1 more author) (2022) Simulation of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 30 (11). pp. 17946-17952. ISSN 1094-4087
Taylor-Mew, J., Shulyak, V., White, B. et al. (2 more authors) (2021) Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection. IEEE Photonics Technology Letters, 33 (20). pp. 1155-1158. ISSN 1041-1135
Liu, Y., Yi, X., Bailey, N.J. et al. (6 more authors) (2021) Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12 (1). 4784.
Lim, L.W. orcid.org/0000-0002-8039-5406, Patil, P., Marko, I. et al. (5 more authors) (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology, 35 (9). 095031. ISSN 0268-1242
Petticrew, J. orcid.org/0000-0003-3424-2457, Dimler, S. orcid.org/0000-0001-9998-8562, Tan, C.H. et al. (1 more author) (2020) Modeling temperature dependent avalanche characteristics of InP. Journal of Lightwave Technology, 38 (4). pp. 961-965. ISSN 0733-8724
Yi, X., Xie, S., Liang, B. et al. (6 more authors) (2019) Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics, 13 (10). pp. 683-686. ISSN 1749-4885
Sharpe, M.K., Marko, I.P., Duffy, D.A. et al. (7 more authors) (2019) A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics, 126 (12). 125706. ISSN 0021-8979
Lim, L., Tan, C.H., Ng, J. et al. (2 more authors) (2019) Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37 (10). pp. 2375-2379. ISSN 0733-8724
Tan, C.H., Velichko, A., Lim, L.W. et al. (1 more author) (2019) Few-photon detection using InAs avalanche photodiodes. Optics Express, 27 (4). pp. 5835-5842. ISSN 1094-4087
Hobbs, M. orcid.org/0000-0003-4661-692X, Zhu, C., Grainger, M. et al. (2 more authors) (2018) Quantitative traceable temperature measurement using novel thermal imaging camera. Optics Express, 26 (19). 24904-24916. ISSN 1094-4087
Yi, X., Xie, S., Liang, B. et al. (6 more authors) (2018) Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports, 8 (1). 9107. ISSN 2045-2322
Balades, N., Sales, D.L., Herrera, M. et al. (4 more authors) (2018) Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM. Nanoscale Research Letters, 13. 125. ISSN 1931-7573
Petticrew, J.D. orcid.org/0000-0003-3424-2457, Dimler, S.J., Zhou, X. et al. (3 more authors) (2018) Avalanche breakdown timing statistics for silicon single photon avalanche diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24 (2). ISSN 1077-260X
Pinel, L.L.G. orcid.org/0000-0001-8603-5631, Dimler, S.J., Zhou, X. et al. (4 more authors) (2018) Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 26 (3). pp. 3568-3576.
Hobbs, M.J., Grainger, M.P., Zhu, C. et al. (2 more authors) (2018) Quantitative thermal imaging using single-pixel Si APD and MEMS mirror. Optics Express, 26 (3). pp. 3188-3198. ISSN 1094-4087
Abdullah, S., Tan, C.H., Zhou, X. et al. (3 more authors) (2017) Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes. Optics Express, 25 (26). pp. 33610-33616.
Zhou, X., Tan, C.H., Zhang, S. et al. (4 more authors) (2017) Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4. 170071. p. 170071.
Zhou, X., White, B., Meng, X. et al. (7 more authors) (2017) Proton radiation effect on InAs avalanche photodiodes. Optics Express, 25 (3). pp. 2818-2825.
Zhou, X., Zhang, S., David, J. et al. (2 more authors) (2016) Avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 quaternary alloys. IEEE Photonics Technology Letters, 28 (22). pp. 2495-2498. ISSN 1041-1135
Velichko, A.V., Kudrynskyi, Z.R., Di Paola, D.M. et al. (7 more authors) (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18). 182115. ISSN 0003-6951
Xie, S., Zhou, X. orcid.org/0000-0001-9022-5032, Zhang, S. et al. (5 more authors) (2016) InGaAs/AlGaAsSb avalanche photodiode with high gain - bandwidth product. Optics Express, 24 (21). pp. 24242-24247. ISSN 1094-4087
Auckloo, A., Cheong, J.S., Meng, X. et al. (5 more authors) (2016) Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11 (3). P03021. ISSN 1748-0221
Meng, X., Xie, S., Zhou, X. et al. (5 more authors) (2016) InGaAs/InAlAs single photon avalanche diode for 1550 nm photons. Royal Society Open Science, 3 (3). 150584. ISSN 2054-5703
Meng, X., Zhou, X., Zhang, S. et al. (3 more authors) (2015) InAs avalanche photodiodes as X-ray detectors. Journal of Instrumentation, 10 (10). ISSN 1748-0221
White, B.S., Sandall, I.C., David, J.P.R. et al. (1 more author) (2015) InAs Diodes Fabricated Using Be Ion Implantation. IEEE Transactions on Electron Devices, 62 (9). 2928 - 2932. ISSN 0018-9383
Xie, S., Zhang, S. and Tan, C.H. (2015) InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation. IEEE Photonics Technology Letters, 27 (16). 1745 - 1748. ISSN 1041-1135
Zhou, X., Meng, X., Krysa, A.B. et al. (3 more authors) (2015) InAs Photodiodes for 3.43 mu(text)m Radiation Thermometry. IEEE Sensors Journal, 15 (10). 5555 - 5560. ISSN 1530-437X
Meng, X., Tan, C.H., Dimler, S. et al. (2 more authors) (2014) 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22 (19). 22608 - 22615.
Ng, J.S., Meng, X., Lees, J.E. et al. (2 more authors) (2014) Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9. T08005. ISSN 1748-0221
Gomes, R.B., Tan, C.H., Meng, X. et al. (2 more authors) (2014) GaAs/Al 0.8 Ga 0.2 As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9. P03014.
Zhou, X., Hobbs, M.J., White, B.S. et al. (3 more authors) (2014) An InGaAlAs-InGaAs two-color photodetector for ratio thermometry. IEEE Transactions on Electronic Devices, 61 (3). 838 - 843. ISSN 0018-9383
Xie, J., Ng, J.S. and Tan, C.H. (2013) An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown. IEEE Photonics Journal, 5 (4). ISSN 1943-0655
Sandall, I.C., Ng, J.S., Xie, S. et al. (2 more authors) (2013) Temperature dependence of impact ionization in InAs. Optics Express, 21 (7). 8630 - 8637. ISSN 1094-4087
Gomes, R.B., Tan, C.H., Lees, J.E. et al. (2 more authors) (2012) Effects of Dead Space on Avalanche Gain Distribution of X-Ray Avalanche Photodiodes. IEEE Transactions on Electron Devices, 59 (4). 1063 - 1067. ISSN 0018-9383
Xie, S. and Tan, C.H. (2011) AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage. IEEE Journal of Quantum Electronics, 47 (11). pp. 1391-1395. ISSN 0018-9197
Vines, P., Tan, C.H., David, J.P.R. et al. (5 more authors) (2011) Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors. IEEE Journal of Quantum Electronics, 47 (2). pp. 190-197. ISSN 0018-9197
Marshall, A.R.J., David, J.P.R. and Tan, C.H. (2010) Impact ionization in InAs electron avalanche photodiodes. IEEE Transactions on Electron Devices, 57 (10). pp. 2631-2638. ISSN 0018-9383
Mun, S.C.L.T., Tan, C.H., Dimler, S.J. et al. (4 more authors) (2009) A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes. IEEE Journal of Quantum Electronics, 45 (5-6). pp. 566-571. ISSN 0018-9197
Goh, Y.L., Ng, J.S., Tan, C.H. et al. (2 more authors) (2005) Excess noise measurement in In0.53Ga0.47As. IEEE Photonics Technology Letters, 17 (11). pp. 2412-2414. ISSN 1041-1135
Ng, J.S., Tan, C.H., David, J.P.R. et al. (1 more author) (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE Journal of Quantum Electronics, 41 (8). pp. 1092-1096. ISSN 0018-9197
Ng, J.S., Tan, C.H., David, J.P.R. et al. (1 more author) (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE Journal of Quantum Electronics, 41 (8). pp. 1092-1096. ISSN 0018-9197
Groves, C., Tan, C.H., David, J.P.R. et al. (2 more authors) (2005) Exponential time response in analogue and Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices, 52 (7). pp. 1527-1534. ISSN 0018-9383
Yee, M., Ng, W.K., David, J.P.R. et al. (3 more authors) (2003) Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors. IEEE Transactions on Electron Devices, 50 (10). pp. 2021-2026. ISSN 0018-9383
Ng, J.S., Tan, C.H., David, J.P.R. et al. (2 more authors) (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE Transactions on Electron Devices, 50 (4). pp. 901-905. ISSN 0018-9383
Ng, J.S., Tan, C.H., Ng, B.K. et al. (5 more authors) (2002) Effect of dead space on avalanche speed. IEEE Transactions on Electron Devices, 49 (4). pp. 544-549. ISSN 0018-9383
Tan, C.H., David, J.P.R., Plimmer, S.A. et al. (3 more authors) (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE Transactions on Electron Devices, 48 (7). pp. 1310-1317. ISSN 0018-9383
Proceedings Paper
Collins, X., Sheridan, B.S., Price, D.M. et al. (5 more authors) (2023) Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection. In: Jiang, S. and Digonnet, M.J., (eds.) Optical Components and Materials XX. SPIE OPTO, 28 Jan - 03 Feb 2023, San Francisco, California, United States. Society of Photo Optical Instrumentation Engineers (SPIE) , 124170k-124170k. ISBN 9781510659391
Collins, X., White, B., Cao, Y. orcid.org/0000-0002-6353-7660 et al. (4 more authors) (2022) Low-noise AlGaAsSb avalanche photodiodes for 1550nm light detection. In: Jiang, S. and Digonnet, M.J.F., (eds.) Optical Components and Materials XIX. Optical Components and Materials XIX, 22 Jan - 28 Feb 2022, San Francisco, California, United States. Proceedings of SPIE, 11997 . Society of Photo-optical Instrumentation Engineers (SPIE) , p. 1199709. ISBN 9781510648654
Ng, J.S. orcid.org/0000-0002-1064-0410 and Tan, C.H. orcid.org/0000-0002-8900-9452 (2018) AlGaAsSb avalanche photodiodes. In: 2018 IEEE Photonics Conference (IPC). 2018 IEEE Photonics Conference (IPC), 30 Sep - 04 Oct 2018, Reston, VA, USA. Institute of Electrical and Electronics Engineers (IEEE) . ISBN 9781538653593
Zhang, S., Abdullah, S., Tan, C.H. orcid.org/0000-0002-8900-9452 et al. (1 more author) (2018) Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation. In: Mitrofanov, O., Tan, C.H., Pau Vizcaíno, J.L. and Razeghi, M., (eds.) Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19-23 Aug 2018, San Diego, California, United State. Proceedings of SPIE, 10729 . Society of Photo-optical Instrumentation Engineers (SPIE) , 107290f. ISBN 9781510620292
Pinel, L.L.G. orcid.org/0000-0001-8603-5631, Tan, C.H. orcid.org/0000-0002-8900-9452 and Ng, J.S. orcid.org/0000-0002-1064-0410 (2018) Study of avalanche statistics in very low noise AlGaAsSb APDs using a multi-channel analyzer. In: Mitrofanov, O., Tan, C.H., Pau Vizcaíno, J.L. and Razeghi, M., (eds.) Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19-23 Aug 2018, San Diego, California, United States. Proceedings of SPIE, 10729 . Society of Photo-optical Instrumentation Engineers (SPIE) , 107290O. ISBN 9781510620292
Tan, C.H. orcid.org/0000-0002-8900-9452, Ng, J.S. orcid.org/0000-0002-1064-0410, Zhou, X. et al. (3 more authors) (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. In: Proceedings, Advanced Photon Counting Techniques XI. SPIE Commercial + Scientific Sensing and Imaging, 2017, 09-13 Apr 2017, California, United States. SPIE . ISBN 978-1-5106-0926-6
Ng, J.S. orcid.org/0000-0002-1064-0410, Zhou, X., Auckloo, A. et al. (5 more authors) (2016) High sensitivity InAs photodiodes for mid-infrared detection. In: Proceedings of SPIE. Electro-Optical Remote Sensing X, 26 - 27/09/2016, Edinburgh. Society of Photo-optical Instrumentation Engineers . ISBN 978-1-5106-0381-3
Ker, P.J., Marshall, A.R.J., Tan, C.H. orcid.org/0000-0002-8900-9452 et al. (1 more author) (2016) Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. In: Photonics (ICP), 2016 IEEE 6th International Conference on. 2016 IEEE 6th International Conference on Photonics (ICP), 14-16 Mar 2016, Sarawak, Malaysia. IEEE .
Zhou, X., Ng, J.S. and Tan, C.H. (2015) In As photodiode for low temperature sensing. In: Meynart, R., Neeck, S.P. and Shimoda, H., (eds.) SPIE Proceedings. Sensors, Systems, and Next-Generation Satellites XIX, September 21, 2015, Toulouse, France. SPIE , Bellingham .