Items where authors include "Potter, R.J."

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Partida-Manzanera, T., Zaidi, Z.H., Roberts, J.W. et al. (6 more authors) (2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. Journal of Applied Physics, 126 (3). 034102. ISSN 0021-8979

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