Items where authors include "Plimmer, S.A."

Article

Hambleton, P.J., Ng, B.K., Plimmer, S.A. et al. (2 more authors) (2003) The effects of nonlocal impact ionization on the speed of avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (2). pp. 347-351. ISSN 0018-9383

Ng, B.K., David, J.P.R., Plimmer, S.A. et al. (4 more authors) (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE Transactions on Electron Devices, 48 (10). pp. 2198-2204. ISSN 0018-9383

Tan, C.H., David, J.P.R., Plimmer, S.A. et al. (3 more authors) (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE Transactions on Electron Devices, 48 (7). pp. 1310-1317. ISSN 0018-9383

Plimmer, S.A., David, J.P.R., Grey, R. et al. (1 more author) (2000) Avalanche multiplication in AlxGa1-xAs (x=0to0.60). IEEE Transactions on Electron Devices, 47 (5). pp. 1089-1097. ISSN 0018-9383

Plimmer, S.A., David, J.P.R. and Ong, D.S. (2000) The merits and limitations of local impact ionization theory. IEEE Transactions on Electron Devices, 47 (5). pp. 1080-1088. ISSN 0018-9383

Li, K.F., Ong, D.S., David, J.P.R. et al. (5 more authors) (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE Transactions on Electron Devices, 47 (5). pp. 910-914. ISSN 0018-9383