Items where authors include "Mowbray, D.J."

Article

Chen, L., Adeyemo, S.O., Fonseka, H.A. et al. (9 more authors) (2022) Long-term stability and optoelectronic performance enhancement of InAsP nanowires with an ultrathin InP passivation layer. Nano Letters, 22 (8). pp. 3433-3439. ISSN 1530-6984

Fonseka, H.A., Velichko, A.V., Zhang, Y. et al. (6 more authors) (2019) Self-formed quantum wires and dots in GaAsP-GaAsP core-shell nanowires. Nano Letters, 19 (6). pp. 4158-4165. ISSN 1530-6984

Zhang, Y., Davis, G., Fonseka, H.A. et al. (11 more authors) (2019) Highly strained III-V-V coaxial nanowire quantum wells with strong carrier confinement. ACS Nano, 13 (5). pp. 5931-5938. ISSN 1936-0851

Orchard, J.R., Woodhead, C., Wu, J. et al. (6 more authors) (2017) Silicon-based single quantum dot emission in the telecoms C-band. ACS Photonics, 4 (7). pp. 1740-1746.

Orchard, J.R., Shutts, S., Sobiesierski, A. et al. (9 more authors) (2016) In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express, 24 (6). p. 6196. ISSN 1094-4087

Nabavi, E., Badcock, T.J., Nuytten, T. et al. (4 more authors) (2009) Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots. Journal of Applied Physics, 105 (5). Art. No.053512. ISSN 0021-8979

Hasbullah, N.F., Ng, Jo Shien, Liu, Hui-Yun et al. (4 more authors) (2008) Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures. IEEE Journal of Quantum Electronics, 45 (1). pp. 79-85. ISSN 0018-9197

Kundys, D.O., Wells, J.P.R., Andreev, A.D. et al. (6 more authors) (2006) Resolution of discrete excited states in InxGa1−xN multiple quantum wells using degenerate four-wave mixing. Physical review B: Condensed matter and materials physics, 73 (16). 165309. ISSN 1098-0121

Walker, C.L., Sandall, I.C., Smowton, P.M. et al. (4 more authors) (2005) The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers. IEEE Photonics Technology Letters, 17 (10). pp. 2011-2013. ISSN 1041-1135

Ray, S.K., Groom, K.M., Hogg, R.A. et al. (5 more authors) (2005) Improved Temperature Performance of 1.31-mu/m Quantum Dot Lasers by Optimized Ridge Waveguide Design. IEEE Photonics Technology Letters, 17 (9). pp. 1785-1787. ISSN 1041-1135

Liu, H.Y., Childs, D.T., Badcock, T.J. et al. (7 more authors) (2005) High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE Photonics Technology Letters, 17 (6). pp. 1139-1141. ISSN 1041-1135

Proceedings Paper

Mowbray, D.J. and Orchard, J.R. (2016) Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications. In: SPIE Proceedings. Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII, February 13, 2016, San Francisco, California, United States. SPIE .