Items where authors include "Luo, P."

Article

Du, Y., Yan, H., Luo, P. et al. (5 more authors) (2023) Investigation on shift in threshold voltages of 1.2 kV GaN polarization superjunction (PSJ) HFETs. IEEE Transactions on Electron Devices, 70 (1). pp. 178-184. ISSN 0018-9383

Yan, H., Du, Y., Luo, P. et al. (2 more authors) (2021) Analytical modeling of sheet carrier density and ON-resistance in Polarization Super-Junction HFETs. IEEE Transactions on Electron Devices, 68 (11). pp. 5714-5719. ISSN 0018-9383

Luo, P., Madathil, S. orcid.org/0000-0001-6832-1300, Nishizawa, S.-I. et al. (1 more author) (2021) Turn-off dV/dt controllability in 1.2kV MOS-bipolar devices. IEEE Transactions on Power Electronics, 36 (3). pp. 3304-3311. ISSN 0885-8993

Luo, P. and Madathil, S.N.E. orcid.org/0000-0001-6832-1300 (2020) 3-D scaling rules for high voltage planar clustered IGBTs. IEEE Transactions on Electron Devices, 67 (12). pp. 5613-5620. ISSN 0018-9383

Luo, P. and Madathil, S.N.E. orcid.org/0000-0001-6832-1300 (2020) Theoretical analysis of on-state performance limit of 4H-SiC IGBT in field-stop technology. IEEE Transactions on Electron Devices, 67 (12). pp. 5621-5627. ISSN 0018-9383

Luo, P., Yao, W. and Susmel, L. orcid.org/0000-0001-7753-9176 (2020) Assessing variable amplitude multiaxial fatigue lifetime of notched components based on the notch critical plane approach. International Journal of Fatigue, 143. 105991. ISSN 0142-1123

Luo, P., Madathil, S. orcid.org/0000-0001-6832-1300, Nishizawa, S. et al. (1 more author) (2020) Evaluation of dynamic avalanche performance in 1.2kV MOS-bipolar devices. IEEE Transactions on Electron Devices, 67 (9). pp. 3691-3697. ISSN 0018-9383

Luo, P., Yao, W. and Susmel, L. orcid.org/0000-0001-7753-9176 (2020) An improved critical plane and cycle counting method to assess damage under variable amplitude multiaxial fatigue loading. Fatigue and Fracture of Engineering Materials and Structures, 43 (9). pp. 2024-2039. ISSN 8756-758X

Luo, P., Yao, W., Susmel, L. orcid.org/0000-0001-7753-9176 et al. (1 more author) (2020) Prediction of fatigue damage region with the use of the notch critical plane approach for crack initiation and propagation. International Journal of Fatigue, 135. 105533. ISSN 0142-1123

Luo, P., Yao, W., Susmel, L. orcid.org/0000-0001-7753-9176 et al. (1 more author) (2019) Prediction methods of fatigue critical point for notched components under multiaxial fatigue loading. Fatigue and Fracture of Engineering Materials and Structures, 42 (12). pp. 2782-2793. ISSN 8756-758X

Luo, P., Long, H.Y. and Madathil, S.N. orcid.org/0000-0001-6832-1300 (2018) A novel approach to suppress the collector induced barrier lowering (CIBL) effect in narrow mesa IGBTs. IEEE Electron Device Letters, 39 (9). pp. 1350-1353. ISSN 0741-3106

Luo, P., Long, H.Y., Sweet, M.R. et al. (2 more authors) (2018) Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT. IEEE Transactions on Electron Devices, 65 (4). pp. 1440-1446. ISSN 0018-9383

Luo, P., Sweet, M. and Ekkanath Madathil, S. (2018) A snap-back free Shorted Anode Super-Junction TCIGBT. IET Power Electronics, 11 (4). pp. 654-659. ISSN 1755-4535

Luo, P., Yao, W., Susmel, L. orcid.org/0000-0001-7753-9176 et al. (2 more authors) (2017) A survey on multiaxial fatigue damage parameters under non-proportional loadings. Fatigue & Fracture of Engineering Materials and Structures, 40 (9). pp. 1323-1342. ISSN 8756-758X

Proceedings Paper

Hu, Y., Wang, Q., Shao, W. et al. (4 more authors) (2024) Beyond one-to-one: rethinking the referring image segmentation. In: 2023 IEEE/CVF International Conference on Computer Vision (ICCV). International Conference on Computer Vision (ICCV) 2023, 02-06 Oct 2023, Paris, France. Institute of Electrical and Electronics Engineers (IEEE) . ISBN 979-8-3503-0719-1

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300 and de Souza, P. (2021) Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology. In: Proceedings of 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia). 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), 24-27 May 2021, Singapore, Singapore. IEEE , pp. 1319-1324. ISBN 9781728163451

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Nishizawa, S.-I. et al. (1 more author) (2020) Dynamic avalanche free super junction-TCIGBT for high power density operation. In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13-18 Sep 2020, Vienne, Austria (online). IEEE . ISBN 9781728148373

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Nishizawa, S.-I. et al. (1 more author) (2020) High dV/dt controllability of 1.2kV Si-TCIGBT for high flexibility design with ultra-low loss operation. In: Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 15-19 Mar 2020, New Orleans, LA, USA. Institute of Electrical and Electronics Engineers (IEEE) , pp. 686-689. ISBN 9781728148304

Luo, P., Ekkanath Madathil, S.N., Nishizawa, S. et al. (1 more author) (2020) Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation. In: Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM). 65th IEEE International Electron Devices Meeting (IEDM), 07-11 Dec 2019, San Francisco, CA, USA. Institute of Electrical and Electronics Engineers (IEEE) , 12.3.1-12.3.4. ISBN 9781728140339

Luo, P., Long, H.Y., Sweet, M.R. et al. (2 more authors) (2017) Analysis of a Clustered IGBT and Silicon Carbide MOSFET Hybrid Switch. In: Industrial Electronics (ISIE), 2017 IEEE 26th International Symposium on. 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), 19-21 Jun 2017, Edinburgh, UK. IEEE , pp. 612-615.