Items where authors include "Kuball, M."

Article

Wohlfahrt, M., Uren, M.J., Yin, Y. et al. (2 more authors) (2021) Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks. Applied Physics Letters, 119 (24). 243502. ISSN 0003-6951

Jiang, S. orcid.org/0000-0002-3687-1882, Lee, K.B. orcid.org/0000-0002-5374-2767, Zaidi, Z.H. et al. (3 more authors) (2019) Field plate designs in all-GaN cascode heterojunction field-effect transistors. IEEE Transactions on Electron Devices, 66 (4). pp. 1688-1693. ISSN 0018-9383

Singh, M., Karboyan, S., Uren, M.J. et al. (4 more authors) (2019) Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers. Microelectronics Reliability, 95. pp. 81-86. ISSN 0026-2714

Amano, H., Baines, Y., Borga, M. et al. (39 more authors) (2018) The 2018 GaN Power Electronics Roadmap. Journal of Physics D: Applied Physics, 51. 163001. ISSN 0022-3727

Lee, K.B., Guiney, I., Jiang, S. et al. (7 more authors) (2015) Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V. Applied Physics Express, 8 (3). 036502. ISSN 1882-0778

Proceedings Paper

Chatterjee, I., Uren, M.J., Pooth, A. et al. (9 more authors) (2016) Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs. In: 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 17-21 Apr 2016, Pasadena, USA. IEEE .