Items where authors include "Houston, P."

Article

Pinchbeck, J., Lee, K.B. orcid.org/0000-0002-5374-2767, Jiang, S. et al. (1 more author) (2021) Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects. Journal of Physics D: Applied Physics, 54 (10). 105104. ISSN 0022-3727

Choi, F.S., Griffiths, J.T., Ren, C. et al. (7 more authors) (2018) Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, 124 (5). 055702. ISSN 0021-8979

Amano, H., Baines, Y., Borga, M. et al. (39 more authors) (2018) The 2018 GaN Power Electronics Roadmap. Journal of Physics D: Applied Physics, 51. 163001. ISSN 0022-3727

Fischer, S., Houston, P., Monk, N.A.M. orcid.org/0000-0002-5465-4857 et al. (1 more author) (2013) Is a Persistent Global Bias Necessary for the Establishment of Planar Cell Polarity? PLOS ONE, 8 (4). e60064. ISSN 1932-6203

Proceedings Paper

Alvarez, B., Francis, D., Faili, F. et al. (4 more authors) (2016) Elimination of leakage in GaN-on-diamond. In: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016 IEEE. 2016 IEEE CSIC Symposium, 23–26 October 2016, Austin, TX, USA. IEEE , pp. 114-117.