Items where authors include "Guiney, I."
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Yin, Y., Pinchbeck, J., O'Regan, C. et al. (3 more authors) (2022) Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique. IEEE Electron Device Letters, 43 (10). pp. 1641-1644. ISSN 0741-3106
Choi, F.S., Griffiths, J.T., Ren, C. et al. (7 more authors) (2018) Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, 124 (5). 055702. ISSN 0021-8979
Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979
Tang, F.Z., Lee, K. orcid.org/0000-0002-5374-2767, Guiney, I. et al. (11 more authors) (2018) Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, 123 (2). 024902. ISSN 0021-8979
Jiang, S., Lee, K.B., Guiney, I. et al. (7 more authors) (2017) All-GaN Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics, 32 (11). pp. 8743-8750. ISSN 0885-8993
Qian, H. orcid.org/0000-0003-4597-6325, Lee, K.B., Vajargah, S.H. et al. (8 more authors) (2017) Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, 459. pp. 185-188. ISSN 0022-0248
Qian, H., Lee, K.B., Hosseini Vajargah, S. et al. (7 more authors) (2016) Characterization of p-GaN1-xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242
Roberts, J.W., Chalker, P.R., Lee, K.B. orcid.org/0000-0002-5374-2767 et al. (6 more authors) (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108 (7). 072901. ISSN 0003-6951
Lee, K.B., Guiney, I., Jiang, S. et al. (7 more authors) (2015) Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V. Applied Physics Express, 8 (3). 036502. ISSN 1882-0778
Zaidi, Z.H., Lee, K.B., Guiney, I. et al. (5 more authors) (2014) Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, 116. 244501. ISSN 0021-8979
Proceedings Paper
Chatterjee, I., Uren, M.J., Pooth, A. et al. (9 more authors) (2016) Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs. In: 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 17-21 Apr 2016, Pasadena, USA. IEEE .