Items where authors include "Esendag, V."

Article

Esendag, V. orcid.org/0000-0002-4483-8759, Feng, P., Zhu, C. et al. (3 more authors) (2022) Influence of a two-dimensional growth mode on electrical properties of the GaN buffer in an AlGaN/GaN high electron mobility transistor. Materials, 15 (17). 6043. ISSN 1996-1944

Tian, Y., Feng, P., Zhu, C. et al. (5 more authors) (2022) Nearly lattice-matched GaN distributed Bragg reflectors with enhanced performance. Materials, 15 (10). 3536.

Esendag, V. orcid.org/0000-0002-4483-8759, Bai, J., Fletcher, P. et al. (4 more authors) (2021) Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy. physica status solidi (a) – applications and materials science, 218 (24). 2100474. ISSN 1862-6300

Jiang, S., Cai, Y., Feng, P. et al. (6 more authors) (2020) Exploring an approach toward the intrinsic limits of GaN electronics. ACS Applied Materials & Interfaces, 12 (11). pp. 12949-12954. ISSN 1944-8244

Cai, Y. orcid.org/0000-0002-2004-0881, Zhu, C., Jiu, L. et al. (5 more authors) (2018) Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers. Materials, 11 (10). 1968. ISSN 1996-1944

Cai, Y. orcid.org/0000-0002-2004-0881, Gong, Y., Bai, J. et al. (5 more authors) (2018) Controllable uniform green light emitters enabled by circular HEMT-LED devices. IEEE Photonics Journal, 10 (5).