Items where authors include "Bruckbauer, J."

Article

Bruckbauer, J., Gong, Y., Jiu, L. et al. (9 more authors) (2021) Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN. Journal of Physics D: Applied Physics, 54 (2). 025107. ISSN 0022-3727

Zhao, X., Huang, K., Bruckbauer, J. et al. (9 more authors) (2020) Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports, 10 (1). 12650. ISSN 2045-2322

Trager-Cowan, C., Alasmari, A., Avis, W. et al. (34 more authors) (2020) Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope. Semiconductor Science and Technology, 35 (5). 054001. ISSN 0268-1242

Bruckbauer, J., Trager-Cowan, C., Hourahine, B. et al. (15 more authors) (2020) Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates. Journal of Applied Physics, 127 (3). ISSN 0021-8979

Trager-Cowan, C., Alasmari, A., Avis, W. et al. (33 more authors) (2019) Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7 (11). B73-B82.

Naresh-Kumar, G., Bruckbauer, J., Winkelmann, A. et al. (6 more authors) (2019) Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope. Nano Letters, 19 (6). pp. 3863-3870. ISSN 1530-6984

Gong, Y., Jiu, L., Bruckbauer, J. et al. (3 more authors) (2019) Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN. Scientific Reports, 9. 986. ISSN 2045-2322

Brasser, C., Bruckbauer, J., Gong, Y. et al. (6 more authors) (2018) Cathodoluminescence studies of chevron features in semi-polar (1122) InGaN/GaN multiple quantum well structures. Journal of Applied Physics, 123 (17). 174502. ISSN 0021-8979

Bruckbauer, J., Li, Z., Naresh-Kumar, G. et al. (8 more authors) (2017) Spatially-resolved optical and structural properties of semi-polar [Formula: see text] Al x Ga1-x N with x up to 0.56. Scientific Reports, 7 (1). 10804. ISSN 2045-2322

Li, Z., Wang, L., Jiu, L. et al. (6 more authors) (2017) Optical investigation of semi-polar (11-22) Al<inf>x</inf>Ga<inf>1-x</inf>N with high Al composition. Applied Physics Letters, 110 (9). ISSN 0003-6951

Proceedings Paper

Trager-Cowan, C., Alasmari, A., Avis, W. et al. (34 more authors) (2020) Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope. In: IOP Conference Series: Materials Science and Engineering. 16th European Workshop on Modern Developments and Applications in Microbeam Analysis, 19-23 May 2019, Trondheim, Norway. IOP Publishing .