Temperature dependence of impact ionization in GaAs

Groves, C., Ghin, R., David, J.P.R. et al. (1 more author) (2003) Temperature dependence of impact ionization in GaAs. IEEE Transactions on Electron Devices, 50 (10). pp. 2027-2031. ISSN 0018-9383

Abstract

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Authors/Creators:
  • Groves, C.
  • Ghin, R.
  • David, J.P.R.
  • Rees, G.J.
Copyright, Publisher and Additional Information: Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche diodes, avalanche photodiodes, impact ionization, ionization coefficients, semiconductor materials measurements, temperature dependence
Dates:
  • Published: October 2003
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 19 Dec 2005
Last Modified: 07 Jun 2014 09:04
Published Version: http://dx.doi.org/10.1109/TED.2003.816918
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1109/TED.2003.816918

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