The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells

Long, F., Hagston, W.E., Harrison, P. et al. (1 more author) (1997) The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells. Journal of Applied Physics, 82 (7). pp. 3414-3421. ISSN 1089-7550

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Authors/Creators:
  • Long, F.
  • Hagston, W.E.
  • Harrison, P.
  • Stirner, T.
Copyright, Publisher and Additional Information: Copyright © 1997 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Dates:
  • Published: 1 October 1997
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Repository Officer
Date Deposited: 01 Nov 2006
Last Modified: 25 Oct 2016 21:36
Published Version: http://dx.doi.org/10.1063/1.365657
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.365657

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