Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V

Lee, K.B., Guiney, I., Jiang, S. et al. (7 more authors) (2015) Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V. Applied Physics Express, 8 (3). 036502. ISSN 1882-0778

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Copyright, Publisher and Additional Information: © 2015 The Japan Society of Applied Physics. This is an author produced version of a paper subsequently published in Applied Physics Express. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 19 February 2015
  • Published (online): 19 February 2015
  • Accepted: 1 February 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 21 Sep 2016 09:15
Last Modified: 20 Mar 2018 21:47
Published Version: http://dx.doi.org/10.7567/APEX.8.036502
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.7567/APEX.8.036502
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