Subthreshold diode characteristics of InAs/GaAs quantum dot lasers

Spencer, P., Clarke, E., Murray, R. et al. (3 more authors) (2011) Subthreshold diode characteristics of InAs/GaAs quantum dot lasers. Physical review B: Condensed matter and materials physics, 83 (20). 205407. ISSN 1098-0121

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Copyright, Publisher and Additional Information: ©2011 American Physical Society. This is an author produced version of a paper subsequently published in Physical review B: Condensed matter and materials physics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: HIGH IDEALITY FACTORS; THEORETICAL-MODEL; POPULATION; THRESHOLD; GAIN
Dates:
  • Published: 17 May 2011
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 09 May 2016 10:11
Last Modified: 16 Nov 2016 07:27
Published Version: http://dx.doi.org/10.1103/PhysRevB.83.205407
Status: Published
Publisher: American Physical Society
Refereed: Yes
Identification Number: https://doi.org/10.1103/PhysRevB.83.205407

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