Ferromagnetism in Cr-doped topological insulator TlSbTe2
Wang, Z, Segawa, K, Sasaki, S et al. (2 more authors)
(2015)
Ferromagnetism in Cr-doped topological insulator TlSbTe2.
APL Materials, 3 (8).
ARTN 083302.
ISSN 2166-532X
Abstract
We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl1−x Cr x SbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θC was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μB (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.
Metadata
Authors/Creators:
Wang, Z
Segawa, K
Sasaki, S
Taskin, AA
Ando, Y
Copyright, Publisher and Additional Information:
C 2015 Author(s). Creative Commons Attribution 3.0
Unported License.
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CORE (COnnecting REpositories)