Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

Lioliou, G., Meng, X., Ng, J.S. et al. (1 more author) (2016) Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 813. pp. 1-9. ISSN 0168-9002

Abstract

Metadata

Authors/Creators:
  • Lioliou, G.
  • Meng, X.
  • Ng, J.S.
  • Barnett, A.M.
Copyright, Publisher and Additional Information: © 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Keywords: Gallium Arsenide; p-i-n photodiodes; X-ray spectroscopy; Visible and near infrared responsivity
Dates:
  • Published: 21 March 2016
  • Published (online): 22 December 2015
  • Accepted: 14 December 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ROYAL SOCIETYUF100130
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/I010920/1
SCIENCE AND TECHNOLOGY FACILITIES COUNCILST/H000127/1
Depositing User: Symplectic Sheffield
Date Deposited: 19 Feb 2016 15:10
Last Modified: 19 Feb 2016 15:10
Published Version: http://dx.doi.org/10.1016/j.nima.2015.12.030
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.nima.2015.12.030

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