Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy

Walther, T., Richards, R.D. and Bastiman, F. (2015) Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy. Crystal Research and Technology, 50 (1). pp. 38-42. ISSN 1521-4079

Abstract

Metadata

Authors/Creators:
  • Walther, T.
  • Richards, R.D.
  • Bastiman, F.
Copyright, Publisher and Additional Information: © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords: Ga(As,Bi); segregation; annular dark-field; X-ray spectroscopy; scanning transmission electron microscopy
Dates:
  • Published: January 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 16 Feb 2016 15:03
Last Modified: 16 Feb 2016 15:03
Published Version: http://dx.doi.org/10.1002/crat.201400157
Status: Published
Publisher: Wiley-VCH Verlag
Refereed: Yes
Identification Number: https://doi.org/10.1002/crat.201400157

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