Walther, T., Richards, R.D. and Bastiman, F. (2015) Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy. Crystal Research and Technology, 50 (1). pp. 38-42. ISSN 1521-4079
Abstract
Annular dark-field (ADF) imaging in a scanning transmission electron microscope (STEM) has been used to measure concentration profiles across thin Ga(As,Bi) layers grown by molecular beam epitaxy, from which the segregation lengths for bismuth surface segregation have been calculated. Performing this for layers grown at two different temperatures, the activation energies for Bi surface segregation have been determined for the lower (GaAsBi-on-GaAs) and for the upper (GaAs-on-GaAsBi) interface. The inequivalence observed is attributed to strain driving the larger Bi atoms preferably towards the free surface during growth.
Metadata
| Authors/Creators: |
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| Copyright, Publisher and Additional Information: | © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| Keywords: | Ga(As,Bi); segregation; annular dark-field; X-ray spectroscopy; scanning transmission electron microscopy |
| Dates: |
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| Institution: | The University of Sheffield |
| Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
| Depositing User: | Symplectic Sheffield |
| Date Deposited: | 16 Feb 2016 15:03 |
| Last Modified: | 16 Feb 2016 15:03 |
| Published Version: | http://dx.doi.org/10.1002/crat.201400157 |
| Status: | Published |
| Publisher: | Wiley-VCH Verlag |
| Refereed: | Yes |
| Identification Number: | https://doi.org/10.1002/crat.201400157 |
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