Twinning in GaAs nanowires on patterned GaAs(111)B

Walther, T. and Krysa, A.B. (2014) Twinning in GaAs nanowires on patterned GaAs(111)B. Crystal Research and Technology, 50 (1). pp. 62-68. ISSN 0232-1300

Abstract

Metadata

Authors/Creators:
  • Walther, T.
  • Krysa, A.B.
Copyright, Publisher and Additional Information: © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords: GaAs; nanowires;transmission electron microscopy; annular dark field; electron energy-loss spectroscopy
Dates:
  • Accepted: 10 September 2014
  • Published: 7 October 2014
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 07 Dec 2015 14:48
Last Modified: 07 Dec 2015 14:48
Published Version: http://dx.doi.org/10.1002/crat.201400166
Status: Published
Publisher: Wiley-VCH Verlag
Refereed: Yes
Identification Number: https://doi.org/10.1002/crat.201400166

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