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Optimization of InP APDs for high-speed lightwave systems

Ong, D.S.G., Ng, J.S., Hayat, M.M., Sun, P. and David, J.P.R (2009) Optimization of InP APDs for high-speed lightwave systems. Journal of Lightwave Technology, 27 (15). pp. 3294-3302. ISSN 0733-8724

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Abstract

Calculations based on a rigorous analytical model are carried out to optimize the width of the indium phosphide avalanche region in high-speed direct-detection avalanche photodiode-based optical receivers. The model includes the effects of intersymbol interference (ISI), tunneling current, avalanche noise, and its correlation with the stochastic avalanche duration, as well as dead space. A minimum receiver sensitivity of -28 dBm is predicted at an optimal width of 0.18 mu m and an optimal gain of approximately 13, for a 10 Gb/s communication system, assuming a Johnson noise level of 629 noise electrons per bit. The interplay among the factors controlling the optimum sensitivity is confirmed. Results show that for a given transmission speed, as the device width decreases below an optimum value, increased tunneling current outweighs avalanche noise reduction due to dead space, resulting in an increase in receiver sensitivity. As the device width increases above its optimum value, the receiver sensitivity increases as device bandwidth decreases, causing ISI to dominate avalanche noise and tunneling current shot noise.

Item Type: Article
Copyright, Publisher and Additional Information: © Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Miss Anthea Tucker
Date Deposited: 12 Aug 2009 11:14
Last Modified: 08 Feb 2013 16:58
Published Version: http://dx.doi.org/10.1109/JLT.2009.2020303
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/JLT.2009.2020303
URI: http://eprints.whiterose.ac.uk/id/eprint/9082

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