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Avalanche noise characteristics of thin GaAs structures with distributed carrier generation

Li, K.F., Ong, D.S., David, J.P.R., Tozer, R.C., Rees, G.J., Plimmer, S.A., Chang, K.Y. and Roberts, J.S. (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE Transactions on Electron Devices, 47 (5). pp. 910-914. ISSN 0018-9383

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Abstract

It is known that both pure electron and pure hole injection into thin GaAs multiplication regions gives rise to avalanche multiplication with noise lower than predicted by the local noise model. In this paper, it is shown that the noise from multiplication initiated by carriers generated throughout a 0.1 μm avalanche region is also lower than predicted by the local model but higher than that obtained with pure injection of either carrier type. This behavior is due to the effects of nonlocal ionization brought about by the dead space; the minimum distance a carrier has to travel in the electric field to initiate an ionization event

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: APD, avalanche multiplication, avalanche noise, GaAs, impact ionization
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 14 Jun 2014 09:48
Published Version: http://dx.doi.org/10.1109/16.841220
Status: Published
Refereed: Yes
Identification Number: 10.1109/16.841220
URI: http://eprints.whiterose.ac.uk/id/eprint/907

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