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Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9)

Ng, B.K., David, J.P.R., Rees, G.J., Tozer, R.C., Hopkinson, M. and Airey, R.J. (2002) Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE Transactions on Electron Devices, 49 (12). pp. 2349-2351. ISSN 0018-9383

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Abstract

Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x < 0.9) diodes showed that the ionization coefficients of Al/sub x/Ga/sub 1-x/As become widely different when x /spl ges/ 0.63 and are virtually independent of x for x /spl ges/ 0.72. A strong dead space effect is also observed in thick Al/sub x/Ga/sub 1-x/As structures with x /spl ges/ 0.6. The breakdown voltage is found to increase at a slower rate with x when x > 0.63.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche breakdown, avalanche multiplication, impact ionization, ionization coefficients
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 07 Jun 2014 05:24
Published Version: http://dx.doi.org/10.1109/TED.2002.805570
Status: Published
Refereed: Yes
Identification Number: 10.1109/TED.2002.805570
URI: http://eprints.whiterose.ac.uk/id/eprint/901

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