Ng, B.K., David, J.P.R., Rees, G.J., Tozer, R.C., Hopkinson, M. and Airey, R.J. (2002) Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE Transactions on Electron Devices, 49 (12). pp. 2349-2351. ISSN 0018-9383
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Published Version: http://dx.doi.org/10.1109/TED.2002.805570
Abstract
Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x < 0.9) diodes showed that the ionization coefficients of Al/sub x/Ga/sub 1-x/As become widely different when x /spl ges/ 0.63 and are virtually independent of x for x /spl ges/ 0.72. A strong dead space effect is also observed in thick Al/sub x/Ga/sub 1-x/As structures with x /spl ges/ 0.6. The breakdown voltage is found to increase at a slower rate with x when x > 0.63.
| Item Type: | Article |
|---|---|
| Copyright, Publisher and Additional Information: | Copyright © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Keywords: | avalanche breakdown, avalanche multiplication, impact ionization, ionization coefficients |
| Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
| ID Code: | 901 |
| Deposited By: | Sherpa Assistant |
| Deposited On: | 20 Dec 2005 |
| Last Modified: | 05 Aug 2007 19:02 |
| Published Version: | http://dx.doi.org/10.1109/TED.2002.805570 |
| Status: | Published |
| Refereed: | Yes |
| Identification Number: | doi:10.1109/TED.2002.805570 |
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