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Field dependence of impact ionization coefficients in In0.53Ga0.47As

Ng, J.S., Tan, C.H., David, J.P.R., Hill, G. and Rees, G.J. (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE Transactions on Electron Devices, 50 (4). pp. 901-905. ISSN 0018-9383


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Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: avalanche breakdown, avalanche multiplication, impact ionization, InGaAs
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Sherpa Assistant
Date Deposited: 20 Dec 2005
Last Modified: 07 Jun 2014 01:19
Published Version: http://dx.doi.org/10.1109/TED.2003.812492
Status: Published
Refereed: Yes
Identification Number: 10.1109/TED.2003.812492
URI: http://eprints.whiterose.ac.uk/id/eprint/899

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